IPA90R340C3XKSA2

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Infineon Technologies

MOSFET N-CH 900V 15A TO220

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Infineon Technologies

MOSFET N-CH 900V 15A TO220

Technical Specifications

Parameters and characteristics for this part

Specification	IPA90R340C3XKSA2

Current - Continuous Drain (Id) @ 25°C	15 A
Drain to Source Voltage (Vdss)	900 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	94 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2400 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max) [Max]	35 W
Rds On (Max) @ Id, Vgs [Max]	340 mOhm
Supplier Device Package	PG-TO220-FP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs [Max]	Vgs (Max)	Technology	Package / Case	Input Capacitance (Ciss) (Max) @ Vds [Max]	Mounting Type	FET Type	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package
Infineon Technologies IPA90R340C3XKSA2	3.5 V	-55 °C	150 °C	340 mOhm	20 V	MOSFET (Metal Oxide)	TO-220-3 Full Pack	2400 pF	Through Hole	N-Channel	900 V	35 W	94 nC	15 A	10 V	PG-TO220-FP

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General part information

N-Channel 900 V 15A (Tc) 35W (Tc) Through Hole PG-TO220-FP

Technical documentation and resources