MCP14E8T-E/SN
Active3A LOW SIDE DUAL INV+NON-INV GATE DRVR, SOIC-8 8 SOIC 3.90MM(.150IN) T/R ROHS COMPLIANT: YES
MCP14E8T-E/SN
Active3A LOW SIDE DUAL INV+NON-INV GATE DRVR, SOIC-8 8 SOIC 3.90MM(.150IN) T/R ROHS COMPLIANT: YES
Description
General part information
MCP14E8 Series
The MCP14E6/E7/E8 devices are a family of 2 A,dual output buffers/MOSFET gate drivers with separate enable functions for each output. As MOSFET gate drivers, the MCP14E6/E7/E8 can charge 1,000 pF gate capacitance in under 20 nsec (max).The inputs are TTL/CMOS compatible and provide 300 mV of hysteresis between the high and low input levels that allows it to be driven from slow rising and falling signals and provide noise immunity.
Technical Specifications
Parameters and characteristics for this part
| Specification | MCP14E8T-E/SN |
|---|---|
| Channel Type | Independent |
| Current - Peak Output (Sink) | 2 A |
| Current - Peak Output (Source) | 2 A |
| Driven Configuration | Low-Side |
| Fall Time (Typ) | 15 ns |
| Gate Channel | N-Channel, P-Channel |
| Gate Type | IGBT, N-Channel, P-Channel MOSFET, MOSFET |
| Input Type | Inverting, Non-Inverting |
| Logic Voltage - VIH | 2.4 V |
| Logic Voltage - VIL | 0.8 V |
| Mounting Type | Surface Mount |
| Number of Drivers | 2 |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -40 °C |
| Package Length | 0.154 in |
| Package Name | 8-SOIC |
| Package Width | 3.9 mm |
| Rise Time (Typ) | 12 ns |
| Voltage - Supply (Maximum) | 18 V |
| Voltage - Supply (Minimum) | 4.5 V |
Pricing
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