TSOD1F8HM RVG

Active

Taiwan Semiconductor Corporation

DIODE GEN PURP 800V 1A SOD123FL

Search across all available documentation for this part.

Active

Taiwan Semiconductor Corporation

DIODE GEN PURP 800V 1A SOD123FL

Technical Specifications

Parameters and characteristics for this part

Specification	TSOD1F8HM RVG

Capacitance @ Vr, F	4 pF
Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	SOD-123F
Reverse Recovery Time (trr)	500 ns
Speed	200 mA, 500 ns
Supplier Device Package	SOD-123FL
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	800 V
Voltage - Forward (Vf) (Max) @ If	1.3 V

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Speed	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Mounting Type	Technology	Reverse Recovery Time (trr)	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Package / Case
Taiwan Semiconductor Corporation TSOD1F2HM RVG	150 °C	-55 °C	200 mA 500 ns	1.3 V	SOD-123FL	Surface Mount	Standard	150 ns	200 V	1 A	5 µA	4 pF	SOD-123F
Taiwan Semiconductor Corporation TSOD1F8HM RVG	150 °C	-55 °C	200 mA 500 ns	1.3 V	SOD-123FL	Surface Mount	Standard	500 ns	800 V	1 A	5 µA	4 pF	SOD-123F

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 800 V 1A Surface Mount SOD-123FL

Technical documentation and resources

No documents available