IAUA250N04S6N007EAUMA1

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Infineon Technologies

IAUA250N04S6N007E IS AN AUTOMOTIVE MOSFET WITH OPTIMOS POWER, N-CHANNEL, NORMAL LEVEL ENHANCEMENT, ROBUST DESIGN, 175°C OPERATION, ROHS COMPLIANT.

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Infineon Technologies

IAUA250N04S6N007E IS AN AUTOMOTIVE MOSFET WITH OPTIMOS POWER, N-CHANNEL, NORMAL LEVEL ENHANCEMENT, ROBUST DESIGN, 175°C OPERATION, ROHS COMPLIANT.

Technical Specifications

Parameters and characteristics for this part

Specification	IAUA250N04S6N007EAUMA1

Current - Continuous Drain (Id) @ 25°C	435 A
Drain to Source Voltage (Vdss)	40 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	151 nC
Input Capacitance (Ciss) (Max) @ Vds	9898 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	5-PowerSFN
Power Dissipation (Max) [Max]	250 W
Rds On (Max) @ Id, Vgs	0.7 mOhm
Supplier Device Package	PG-HSOF-5-4
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Supplier Device Package	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Technology
Infineon Technologies IAUA250N04S6N007EAUMA1	3 V	250 W	N-Channel	-55 °C	175 ░C	20 V	40 V	151 nC	5-PowerSFN	PG-HSOF-5-4	Surface Mount	9898 pF	0.7 mOhm	435 A	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 40 V 435A (Tj) 250W (Tc) Surface Mount PG-HSOF-5-4

Technical documentation and resources