DXTN3C60PS-13

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Diodes Inc

SS LOW SAT TRANSISTOR POWERDI506

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Diodes Inc

SS LOW SAT TRANSISTOR POWERDI506

Technical Specifications

Parameters and characteristics for this part

Specification	DXTN3C60PS-13

Current - Collector (Ic) (Max) [Max]	3 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	200
Frequency - Transition	140 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power - Max [Max]	2.25 W
Supplier Device Package	PowerDI5060-8
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	270 mV
Voltage - Collector Emitter Breakdown (Max)	60 V

NPN, 60V, 3A, PowerDI5060-8

Part	Current - Collector Cutoff (Max) [Max]	Grade	Power - Max [Max]	Qualification	Voltage - Collector Emitter Breakdown (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Current - Collector (Ic) (Max) [Max]	Frequency - Transition	Package / Case	Vce Saturation (Max) @ Ib, Ic	Mounting Type	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Transistor Type
Diodes Inc DXTN3C60PSQ-13	100 nA	Automotive	2.25 W	AEC-Q101	60 V	-55 °C	175 ░C	3 A	140 MHz	8-PowerTDFN	270 mV	Surface Mount	PowerDI5060-8	200	NPN
Diodes Inc DXTN3C60PS-13	100 nA		2.25 W		60 V	-55 °C	175 ░C	3 A	140 MHz	8-PowerTDFN	270 mV	Surface Mount	PowerDI5060-8	200	NPN

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

NPN, 60V, 3A, PowerDI5060-8

Technical documentation and resources