Technical Specifications
Parameters and characteristics for this part
| Specification | STW19NM60N |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 13 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 35 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds | 1000 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-3 |
| Power Dissipation (Max) [Max] | 110 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 285 mOhm |
| Supplier Device Package | TO-247-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 890 | $ 1.76 | |
Description
General part information
STW19NM60N Series
This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
Documents
Technical documentation and resources
TN1225
Technical Notes & ArticlesDS9550
Product SpecificationsFlyers (5 of 7)
Flyers (5 of 7)
Flyers (5 of 7)
Flyers (5 of 7)
AN2344
Application NotesFlyers (5 of 7)
AN4250
Application NotesFlyers (5 of 7)
TN1156
Technical Notes & ArticlesFlyers (5 of 7)