MBRF3080CT

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Taiwan Semiconductor Corporation

DIODE ARR SCHOT 80V 30A ITO220AB

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Taiwan Semiconductor Corporation

DIODE ARR SCHOT 80V 30A ITO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	MBRF3080CT

Current - Average Rectified (Io) (per Diode)	30 A
Current - Reverse Leakage @ Vr	200 µA
Diode Configuration	1 Pair Common Cathode
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-220-3 Full Pack, Isolated Tab
Speed	200 mA, 500 ns
Supplier Device Package	ITO-220AB
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	80 V

Part	Current - Average Rectified (Io) (per Diode)	Technology	Speed	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Package / Case	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Diode Configuration	Speed	Voltage - Forward (Vf) (Max) @ If
Taiwan Semiconductor Corporation MBRF3080CT	30 A	Schottky	200 mA 500 ns	ITO-220AB	80 V	Through Hole	TO-220-3 Full Pack Isolated Tab	200 µA	150 °C	-55 °C	1 Pair Common Cathode
Taiwan Semiconductor Corporation MBRF3080CT-Y	30 A	Schottky		ITO-220AB	80 V	Through Hole	TO-220-3 Full Pack Isolated Tab	200 µA	150 °C	-55 °C	1 Pair Common Cathode	No Recovery Time	950 mV

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode Array 1 Pair Common Cathode 80 V 30A Through Hole TO-220-3 Full Pack, Isolated Tab

Technical documentation and resources