ZVN4525GTA

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Diodes Inc

TRANS MOSFET N-CH 250V 0.31A 4-PIN(3+TAB) SOT-223 T/R

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Diodes Inc

TRANS MOSFET N-CH 250V 0.31A 4-PIN(3+TAB) SOT-223 T/R

Technical Specifications

Parameters and characteristics for this part

Specification	ZVN4525GTA

Current - Continuous Drain (Id) @ 25°C	310 mA
Drain to Source Voltage (Vdss)	250 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	2.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	3.65 nC
Input Capacitance (Ciss) (Max) @ Vds	72 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-261AA, TO-261-4
Power Dissipation (Max) [Max]	2 W
Rds On (Max) @ Id, Vgs	8.5 Ohm
Supplier Device Package	SOT-223-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	40 V

N-Channel Enhancement Mode MOSFET

Part	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	FET Type	Supplier Device Package	Drain to Source Voltage (Vdss)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Package / Case	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C
Diodes Inc ZVN4525GTA	72 pF	8.5 Ohm	N-Channel	SOT-223-3	250 V	Surface Mount	3.65 nC	MOSFET (Metal Oxide)	10 V	2.5 V	TO-261-4 TO-261AA	2 W	-55 °C	150 °C	40 V	310 mA

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General part information

N-Channel Enhancement Mode MOSFET

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