DMT4005SCT

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Diodes Inc

POWER FIELD-EFFECT TRANSISTOR, 100A I(D), 40V, 0.0047OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB, TO-220, 3 PIN

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Active

Diodes Inc

POWER FIELD-EFFECT TRANSISTOR, 100A I(D), 40V, 0.0047OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB, TO-220, 3 PIN

Technical Specifications

Parameters and characteristics for this part

Specification	DMT4005SCT

Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	49.1 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	3062 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	2.3 W, 104 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	4.7 mOhm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

40V N-Channel Enhancement Mode MOSFET

Part	Drain to Source Voltage (Vdss)	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Package / Case	Technology	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Qualification	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Grade	Mounting Type	Vgs(th) (Max) @ Id	FET Type
Diodes Inc DMT4005SCT	40 V	TO-220-3	-55 °C	150 °C	2.3 W 104 W	TO-220-3	MOSFET (Metal Oxide)	10 V	3062 pF	AEC-Q101	49.1 nC	4.7 mOhm	100 A	20 V	Automotive	Through Hole	4 V	N-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Arrow	N/A	1	$ 0.63
Digikey	Tube	1	$ 1.67

General part information

This new generation MOSFET features low on-resistance and fast switching, making it ideal for high efficiency power management applications.