Specification	KTC3198-Y A1G

Current - Collector (Ic) (Max)	150 mA, 0.15 mA
Current - Collector Cutoff (Max)	100 nA
DC Current Gain (hFE) (Min)	70
Frequency - Transition	80 MHz
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-92-3 (TO-226AA) Formed Leads, TO-226-3
Package Name	TO-92
Power - Max	0.5 W
Transistor Type	NPN
Vce Saturation (Max)	250 mV
Voltage - Collector Emitter Breakdown (Max)	50 V

KTC3198 Series

Part	Power - Max	Vce Saturation (Max)	Transistor Type	Frequency - Transition	Current - Collector (Ic) (Max)	Package Name	Voltage - Collector Emitter Breakdown (Max)	Mounting Type	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min)	Package / Case	Operating Temperature (Min)	Operating Temperature (Max)
Taiwan Semiconductor Corporation KTC3198-GR A1G	0.5 W	250 mV	NPN	80 MHz	0.15 mA 150 mA	TO-92	50 V	Through Hole	100 nA	70	TO-226-3 TO-92-3 (TO-226AA) Formed Leads	-55 °C	150 °C
Taiwan Semiconductor Corporation KTC3198-O B1G	0.5 W	250 mV	NPN	80 MHz	0.15 mA 150 mA	TO-92	50 V	Through Hole	100 nA	70	TO-226-3 TO-92-3 (TO-226AA)	-55 °C	150 °C
Taiwan Semiconductor Corporation KTC3198-GR B1G	0.5 W	250 mV	NPN	80 MHz	0.15 mA 150 mA	TO-92	50 V	Through Hole	100 nA	70	TO-226-3 TO-92-3 (TO-226AA)	-55 °C	150 °C
Taiwan Semiconductor Corporation KTC3198-Y A1G	0.5 W	250 mV	NPN	80 MHz	0.15 mA 150 mA	TO-92	50 V	Through Hole	100 nA	70	TO-226-3 TO-92-3 (TO-226AA) Formed Leads	-55 °C	150 °C
Taiwan Semiconductor Corporation KTC3198-BL A1G	0.5 W	250 mV	NPN	80 MHz	0.15 mA 150 mA	TO-92	50 V	Through Hole	100 nA	70	TO-226-3 TO-92-3 (TO-226AA) Formed Leads	-55 °C	150 °C
Taiwan Semiconductor Corporation KTC3198-Y B1G	0.5 W	250 mV	NPN	80 MHz	0.15 mA 150 mA	TO-92	50 V	Through Hole	100 nA	70	TO-226-3 TO-92-3 (TO-226AA)	-55 °C	150 °C

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