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MMBF170Q-13-F - SOT-23-3

MMBF170Q-13-F

Active
Diodes Inc

N-CHANNEL ENHANCEMENT MODE MOSFET

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MMBF170Q-13-F - SOT-23-3

MMBF170Q-13-F

Active
Diodes Inc

N-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationMMBF170Q-13-F
Current - Continuous Drain (Id) @ 25°C500 mA
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds40 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Power Dissipation (Max) [Max]300 mW
Rds On (Max) @ Id, Vgs5 Ohm
Supplier Device PackageSOT-23-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.34
10$ 0.24
100$ 0.12
500$ 0.10
1000$ 0.07
2000$ 0.06
5000$ 0.06
Digi-Reel® 1$ 0.34
10$ 0.24
100$ 0.12
500$ 0.10
1000$ 0.07
2000$ 0.06
5000$ 0.06
Tape & Reel (TR) 10000$ 0.05
30000$ 0.05
50000$ 0.04

Description

General part information

MMBF170Q Series

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching, performance, making it ideal for high efficiency power management applications.