SPA08N50C3XKSA1

Obsolete

Infineon Technologies

MOSFET N-CH 560V 7.6A TO220-FP

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Obsolete

Infineon Technologies

MOSFET N-CH 560V 7.6A TO220-FP

Technical Specifications

Parameters and characteristics for this part

Specification	SPA08N50C3XKSA1

Current - Continuous Drain (Id) @ 25°C	7.6 A
Drain to Source Voltage (Vdss)	560 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	32 nC
Input Capacitance (Ciss) (Max) @ Vds	750 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	32 W
Rds On (Max) @ Id, Vgs [Max]	600 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.9 V

Part	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs [Max]	Vgs(th) (Max) @ Id	Vgs (Max)	Technology
Infineon Technologies SPA08N50C3XKSA1	TO-220-3 Full Pack	10 V	32 W	7.6 A	Through Hole	-55 °C	150 °C	750 pF	N-Channel	32 nC	560 V	600 mOhm	3.9 V	20 V	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 560 V 7.6A (Tc) 32W (Tc) Through Hole PG-TO220-3-31

Technical documentation and resources