IPU075N03L G

Obsolete

Infineon Technologies

MOSFET N-CH 30V 50A TO251-3

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Obsolete

Infineon Technologies

MOSFET N-CH 30V 50A TO251-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPU075N03L G

Current - Continuous Drain (Id) @ 25°C	50 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	18 nC
Input Capacitance (Ciss) (Max) @ Vds	1900 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max)	47 W
Rds On (Max) @ Id, Vgs	7.5 mOhm
Supplier Device Package	PG-TO251-3-21
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	2.2 V

Part	Vgs (Max)	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Mounting Type	Rds On (Max) @ Id, Vgs	FET Type	Package / Case	Power Dissipation (Max)	Technology	Vgs(th) (Max) @ Id [Max]
Infineon Technologies IPU075N03L G	20 V	30 V	4.5 V 10 V	-55 °C	175 ░C	1900 pF	50 A	18 nC	PG-TO251-3-21	Through Hole	7.5 mOhm	N-Channel	IPAK TO-251-3 Short Leads TO-251AA	47 W	MOSFET (Metal Oxide)	2.2 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 30 V 50A (Tc) 47W (Tc) Through Hole PG-TO251-3-21

Technical documentation and resources