IRLL024ZTRPBF

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Infineon Technologies

MOSFET, N-CH, 55V, 5A, SOT-223

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Infineon Technologies

MOSFET, N-CH, 55V, 5A, SOT-223

Technical Specifications

Parameters and characteristics for this part

Specification	IRLL024ZTRPBF

Current - Continuous Drain (Id) @ 25°C	5 A
Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	11 nC
Input Capacitance (Ciss) (Max) @ Vds	380 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-261AA, TO-261-4
Power Dissipation (Max)	1 W
Rds On (Max) @ Id, Vgs	60 mOhm
Supplier Device Package	SOT-223
Technology	MOSFET (Metal Oxide)
Vgs (Max)	16 V
Vgs(th) (Max) @ Id	3 V

Part	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Rds On (Max) @ Id, Vgs	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Technology	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Package / Case	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id
Infineon Technologies IRLL024ZTRPBF	11 nC	380 pF	N-Channel	60 mOhm	Surface Mount	4.5 V 10 V	MOSFET (Metal Oxide)	1 W	55 V	TO-261-4 TO-261AA	5 A	SOT-223	16 V	-55 °C	150 °C	3 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 55 V 5A (Tc) 1W (Ta) Surface Mount SOT-223

Technical documentation and resources