STGF4M65DF2
ObsoleteTRENCH GATE FIELD-STOP IGBT, M SERIES 650 V, 4 A LOW LOSS
STGF4M65DF2
ObsoleteTRENCH GATE FIELD-STOP IGBT, M SERIES 650 V, 4 A LOW LOSS
Description
General part information
STGF4M65DF2 Series
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat)temperature coefficient and tight parameter distribution result in safer paralleling operation.
Technical Specifications
Parameters and characteristics for this part
| Specification | STGF4M65DF2 |
|---|---|
| Current - Collector (Ic) (Max) | 8 A |
| Current - Collector Pulsed (Icm) | 16 A |
| Gate Charge | 15.2 nC |
| IGBT Type | Trench Field Stop |
| Input Type | Standard |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-220-3 Full Pack |
| Package Name | TO-220FP |
| Power - Max | 23 W |
| Reverse Recovery Time (trr) | 133 ns |
| Switching Energy (Off) | 136 µJ |
| Switching Energy (On) | 40 µJ |
| Td (off) @ 25°C | 86 ns |
| Td (on) @ 25°C | 12 ns |
| Test Condition Current | 4 A |
| Test Condition Resistance | 47 Ohm |
| Test Condition Voltage | 400 V |
| Test Condition Voltage (Secondary) | 15 V |
| Vce(on) (Max) | 2.1 V |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
Pricing
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CAD
3D models and CAD resources for this part