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MKZ18V - Diodes

TDTA124E,LM

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Toshiba Semiconductor and Storage

BIPOLAR TRANSISTORS, PNP BIAS RESISTOR BUILT-IN TRANSISTORS (BRT), 22 KΩ/22 KΩ, SOT-23(SOT23)

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MKZ18V - Diodes

TDTA124E,LM

Active
Toshiba Semiconductor and Storage

BIPOLAR TRANSISTORS, PNP BIAS RESISTOR BUILT-IN TRANSISTORS (BRT), 22 KΩ/22 KΩ, SOT-23(SOT23)

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Description

General part information

TDTA124E Series

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 250 MHz 320 mW Surface Mount SOT-23-3

Technical Specifications

Parameters and characteristics for this part

SpecificationTDTA124E,LM
Current - Collector (Ic) (Max)0.1 mA
Current - Collector Cutoff (Max)500 nA
DC Current Gain (hFE) (Min)56
Frequency - Transition250 MHz
Mounting TypeSurface Mount
Package / CaseTO-236-3, SOT-23-3, SC-59
Package NameSOT-23-3
Power - Max320 mW
Resistor - Base (R1) Resistance22 kOhm
Transistor TypePre-Biased, PNP
Vce Saturation (Max)300 mV
Voltage - Collector Emitter Breakdown (Max)50 V

Pricing

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CAD

3D models and CAD resources for this part