
TDTA124E,LM
ActiveToshiba Semiconductor and Storage
BIPOLAR TRANSISTORS, PNP BIAS RESISTOR BUILT-IN TRANSISTORS (BRT), 22 KΩ/22 KΩ, SOT-23(SOT23)

TDTA124E,LM
ActiveToshiba Semiconductor and Storage
BIPOLAR TRANSISTORS, PNP BIAS RESISTOR BUILT-IN TRANSISTORS (BRT), 22 KΩ/22 KΩ, SOT-23(SOT23)
Description
General part information
TDTA124E Series
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 250 MHz 320 mW Surface Mount SOT-23-3
Technical Specifications
Parameters and characteristics for this part
| Specification | TDTA124E,LM |
|---|---|
| Current - Collector (Ic) (Max) | 0.1 mA |
| Current - Collector Cutoff (Max) | 500 nA |
| DC Current Gain (hFE) (Min) | 56 |
| Frequency - Transition | 250 MHz |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SOT-23-3, SC-59 |
| Package Name | SOT-23-3 |
| Power - Max | 320 mW |
| Resistor - Base (R1) Resistance | 22 kOhm |
| Transistor Type | Pre-Biased, PNP |
| Vce Saturation (Max) | 300 mV |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
TDTA124E Data sheet/English
TDTA124E Data sheet/Japanese
Selection Guide Small Signal 2025 Rev1.0
Mini catalog Introduction to Toshiba Bias Resistor Built-in Transistors (Digital Transistors)
Basics of Bias Resistor Built-in Transistors (BRT)
Electrical Characteristics of Bias Resistor Built-In Transistors (BRTs)
Surface Mount Small Signal Transistor (BJT) Precautions for use
Datasheet