MBRAD10100H

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Taiwan Semiconductor Corporation

10A, 100V, SCHOTTKY RECTIFIER

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Active

Taiwan Semiconductor Corporation

10A, 100V, SCHOTTKY RECTIFIER

Technical Specifications

Parameters and characteristics for this part

Specification	MBRAD10100H

Capacitance @ Vr, F	260 pF
Current - Average Rectified (Io)	10 A
Current - Reverse Leakage @ Vr	10 µA
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Qualification	AEC-Q101
Speed	200 mA, 500 ns
Supplier Device Package	ThinDPAK
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	100 V
Voltage - Forward (Vf) (Max) @ If	830 mV

Part	Package / Case	Supplier Device Package	Mounting Type	Current - Reverse Leakage @ Vr	Speed	Grade	Diode Configuration	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Qualification	Voltage - Forward (Vf) (Max) @ If	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Average Rectified (Io) (per Diode)	Capacitance @ Vr, F	Current - Average Rectified (Io)
Taiwan Semiconductor Corporation MBRAD10100DH	DPAK (2 Leads + Tab) SC-63 TO-252-3	ThinDPAK	Surface Mount	10 µA	200 mA 500 ns	Automotive	1 Pair Common Cathode	100 V	Schottky	AEC-Q101	850 mV	150 °C	-55 °C	10 A
Taiwan Semiconductor Corporation MBRAD10100H	DPAK (2 Leads + Tab) SC-63 TO-252-3	ThinDPAK	Surface Mount	10 µA	200 mA 500 ns	Automotive		100 V	Schottky	AEC-Q101	830 mV	150 °C	-55 °C		260 pF	10 A

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General part information

Diode 100 V 10A Surface Mount ThinDPAK

Technical documentation and resources