BUK9Y43-60E,115

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Nexperia USA Inc.

N-CHANNEL 60 V, 43 MΩ LOGIC LEVEL MOSFET IN LFPAK56

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BUK9Y43-60E,115

Active

Nexperia USA Inc.

N-CHANNEL 60 V, 43 MΩ LOGIC LEVEL MOSFET IN LFPAK56

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Description Specifications Series Pricing CAD Documents

Description

General part information

BUK9Y43 Series

Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.

Technical Specifications

Parameters and characteristics for this part

Specification	BUK9Y43-60E,115

Current - Continuous Drain (Id) (Tc)	22 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	5 V
FET Type	N-Channel
Gate Charge (Max)	8.2 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	880 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	SOT-669, SC-100
Package Name	LFPAK56, Power-SO8
Power Dissipation (Max)	45 W
Qualification	AEC-Q101
Rds On (Max)	41 mOhm, 41 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max)	2.1 V

BUK9Y43 Series

Part	Vgs (Max)	Drain to Source Voltage (Vdss)	Package Name	Qualification	Mounting Type	Package / Case	Technology	Rds On (Max)	Current - Continuous Drain (Id) (Tc)	Grade	Operating Temperature (Min)	Operating Temperature (Max)	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max)	Gate Charge (Max)	FET Type
Nexperia USA Inc. BUK9Y43-60E,115	10 V	60 V	LFPAK56 Power-SO8	AEC-Q101	Surface Mount	SC-100 SOT-669	MOSFET (Metal Oxide)	41 mOhm 41 mOhm	22 A	Automotive	-55 °C	175 °C	5 V	2.1 V	45 W	880 pF	8.2 nC	N-Channel