
IQD005N04NM6CGATMA1
Active40 V MOSFET PQFN 5X6MM2 SOURCE DOWN PACKAGE WITH INDUSTRY-LEADING RDS(ON).
Deep-Dive with AI
Search across all available documentation for this part.

IQD005N04NM6CGATMA1
Active40 V MOSFET PQFN 5X6MM2 SOURCE DOWN PACKAGE WITH INDUSTRY-LEADING RDS(ON).
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | IQD005N04NM6CGATMA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 610 A, 58 A |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6 V, 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 161 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 12000 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 9-PowerTDFN |
| Power Dissipation (Max) | 3 W, 333 W |
| Rds On (Max) @ Id, Vgs | 0.47 mOhm |
| Supplier Device Package | PG-TTFN-9-U02 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.8 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 3.79 | |
| 10 | $ 3.40 | |||
| 25 | $ 3.22 | |||
| 100 | $ 2.79 | |||
| 250 | $ 2.64 | |||
| 500 | $ 2.37 | |||
| 1000 | $ 2.00 | |||
| 2500 | $ 1.90 | |||
| Digi-Reel® | 1 | $ 3.79 | ||
| 10 | $ 3.40 | |||
| 25 | $ 3.22 | |||
| 100 | $ 2.79 | |||
| 250 | $ 2.64 | |||
| 500 | $ 2.37 | |||
| 1000 | $ 2.00 | |||
| 2500 | $ 1.90 | |||
| Tape & Reel (TR) | 5000 | $ 1.83 | ||
| Newark | Each (Supplied on Cut Tape) | 1 | $ 3.26 | |
| 10 | $ 2.43 | |||
| 25 | $ 2.24 | |||
| 50 | $ 2.12 | |||
| 100 | $ 2.01 | |||
| 250 | $ 1.90 | |||
| 500 | $ 1.84 | |||
| 1000 | $ 1.79 | |||
Description
General part information
IQD005 Series
The power MOSFET IQD005N04NM6CG 40 V normal-level comes in a PQFN 5x6 mm2Source-Downpackage. The part offers a very low RDS(on)of 0.5 mΩ combined with outstanding thermal performance for easy power loss management. This enables higher system efficiency and power density for a large variety of end applications likeSMPS, battery-powered applications,battery management, andlow-voltage drives.
Documents
Technical documentation and resources