BCR166E6327HTSA1

Infineon Technologies

TRANS PREBIAS PNP 50V SOT23

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Infineon Technologies

TRANS PREBIAS PNP 50V SOT23

Technical Specifications

Parameters and characteristics for this part

Specification	BCR166E6327HTSA1

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	70
Frequency - Transition	160 MHz
Mounting Type	Surface Mount
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	200 mW
Resistor - Base (R1)	4.7 kOhms
Resistor - Emitter Base (R2)	47000 Ohms
Resistors Included	R1 and R2
Supplier Device Package	PG-SOT23
Transistor Type	PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Package / Case	Mounting Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Frequency - Transition	Resistor - Base (R1)	Current - Collector (Ic) (Max) [Max]	Transistor Type	Power - Max [Max]	Resistor - Emitter Base (R2)	Supplier Device Package	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Voltage - Collector Emitter Breakdown (Max) [Max]	Resistors Included
Infineon Technologies BCR166WE6327HTSA1	SC-70 SOT-323	Surface Mount	70	160 MHz	4.7 kOhms	100 mA	PNP - Pre-Biased	250 mW	47000 Ohms	PG-SOT323	100 nA	300 mV	50 V
Infineon Technologies BCR166WH6327XTSA1	SC-70 SOT-323	Surface Mount	70	160 MHz	4.7 kOhms	100 mA	PNP - Pre-Biased	250 mW	47000 Ohms	PG-SOT323	100 nA	300 mV	50 V
Infineon Technologies BCR166E6327HTSA1	SC-59 SOT-23-3 TO-236-3	Surface Mount	70	160 MHz	4.7 kOhms	100 mA	PNP - Pre-Biased	200 mW	47000 Ohms	PG-SOT23	100 nA	300 mV	50 V	R1 and R2

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 160 MHz 200 mW Surface Mount PG-SOT23

Technical documentation and resources