IXFR40N50Q2

Obsolete

IXYS

MOSFET N-CH 500V 29A ISOPLUS247

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Obsolete

IXYS

MOSFET N-CH 500V 29A ISOPLUS247

Technical Specifications

Parameters and characteristics for this part

Specification	IXFR40N50Q2

Current - Continuous Drain (Id) @ 25°C	29 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	110 nC
Input Capacitance (Ciss) (Max) @ Vds	4200 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	320 W
Rds On (Max) @ Id, Vgs	170 mOhm
Supplier Device Package	ISOPLUS247™
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Current - Continuous Drain (Id) @ 25°C	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Vgs (Max)	Power Dissipation (Max) [Max]	Mounting Type	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds
IXYS IXFR40N50Q2	29 A	N-Channel	110 nC	MOSFET (Metal Oxide)	30 V	320 W	Through Hole	5 V	170 mOhm	TO-247-3	-55 °C	150 °C	ISOPLUS247™	10 V	500 V	4200 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 500 V 29A (Tc) 320W (Tc) Through Hole ISOPLUS247™

Technical documentation and resources