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IRLB8314PBF - TO-220AB PKG

IRLB8314PBF

Active
Infineon Technologies

POWER MOSFET, N CHANNEL, 30 V, 130 A, 0.0019 OHM, TO-220AB, THROUGH HOLE

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IRLB8314PBF - TO-220AB PKG

IRLB8314PBF

Active
Infineon Technologies

POWER MOSFET, N CHANNEL, 30 V, 130 A, 0.0019 OHM, TO-220AB, THROUGH HOLE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIRLB8314PBF
Current - Continuous Drain (Id) @ 25°C171 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs60 nC
Input Capacitance (Ciss) (Max) @ Vds5050 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max)125 W
Rds On (Max) @ Id, Vgs2.4 mOhm
Supplier Device PackageTO-220-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 1.53
10$ 0.97
100$ 0.65
500$ 0.51
1000$ 0.46
2000$ 0.43
5000$ 0.39
10000$ 0.38
NewarkEach 1$ 1.39
10$ 1.26
100$ 1.03
500$ 0.88
1000$ 0.74
3000$ 0.70
10000$ 0.67

Description

General part information

IRLB8314 Series

The StrongIRFET™ power MOSFET family is optimized for low RDS(on)and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.