BDP953E6327HTSA1

Obsolete

Infineon Technologies

TRANS NPN 100V 3A SOT223-4

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Obsolete

Infineon Technologies

TRANS NPN 100V 3A SOT223-4

Technical Specifications

Parameters and characteristics for this part

Specification	BDP953E6327HTSA1

Current - Collector (Ic) (Max) [Max]	3 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100
Frequency - Transition	100 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-261AA, TO-261-4
Power - Max [Max]	5 W
Supplier Device Package	PG-SOT223-4-10
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	100 V

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Power - Max [Max]	Operating Temperature	Transistor Type	Current - Collector Cutoff (Max) [Max]	Frequency - Transition	Mounting Type	Package / Case	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Supplier Device Package
Infineon Technologies BDP953E6327HTSA1	100	5 W	150 °C	NPN	100 nA	100 MHz	Surface Mount	TO-261-4 TO-261AA	100 V	3 A	500 mV	PG-SOT223-4-10

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor NPN 100 V 3 A 100MHz 5 W Surface Mount PG-SOT223-4-10

Technical documentation and resources