IDC10D120T6MX1SA1

Obsolete

Infineon Technologies

DIODE GP 1.2KV 15A WAFER

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Obsolete

Infineon Technologies

DIODE GP 1.2KV 15A WAFER

Technical Specifications

Parameters and characteristics for this part

Specification	IDC10D120T6MX1SA1

Current - Average Rectified (Io)	15 A
Current - Reverse Leakage @ Vr	3.5 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	Die
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	Sawn on foil
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	2.05 V

Part	Supplier Device Package	Speed	Speed	Mounting Type	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Current - Average Rectified (Io)	Package / Case	Voltage - Forward (Vf) (Max) @ If	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr
Infineon Technologies IDC10D120T6MX1SA1	Sawn on foil	Standard Recovery >500ns	200 mA	Surface Mount	-40 °C	175 ░C	15 A	Die	2.05 V	Standard	1.2 kV	3.5 µA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 1200 V 15A Surface Mount Sawn on foil

Technical documentation and resources

No documents available