STB80NF03L-04-1

Obsolete

STMicroelectronics

MOSFET N-CH 30V 80A I2PAK

Search across all available documentation for this part.

Obsolete

STMicroelectronics

MOSFET N-CH 30V 80A I2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	STB80NF03L-04-1

Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	110 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	5500 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-60 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max) [Max]	300 W
Rds On (Max) @ Id, Vgs	4 mOhm
Supplier Device Package	I2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	1 V

Part	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Technology	FET Type	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Mounting Type	Vgs (Max)	Drain to Source Voltage (Vdss)	Package / Case	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max) [Max]
STMicroelectronics STB80NE03L-06T4	2.5 V	4.5 V 10 V	MOSFET (Metal Oxide)	N-Channel	D2PAK	6500 pF	-55 °C	175 ░C	150 W	Surface Mount	20 V	30 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	6 mOhm	130 nC
STMicroelectronics STB80NF03L-04-1	1 V	4.5 V 10 V	MOSFET (Metal Oxide)	N-Channel	I2PAK		-60 °C	175 ░C		Through Hole	20 V	30 V	I2PAK TO-262-3 Long Leads TO-262AA	4 mOhm	110 nC	5500 pF	300 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 30 V 80A (Tc) 300W (Tc) Through Hole I2PAK

Technical documentation and resources