IXTP5N50P

Obsolete

IXYS

MOSFET N-CH 500V 4.8A TO220AB

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Obsolete

IXYS

MOSFET N-CH 500V 4.8A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	IXTP5N50P

Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	12.6 nC
Input Capacitance (Ciss) (Max) @ Vds	620 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Rds On (Max) @ Id, Vgs	1.4 Ohm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5.5 V

Part	Drain to Source Voltage (Vdss)	Technology	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Vgs (Max)	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Supplier Device Package
IXYS IXTP5N60P	600 V	MOSFET (Metal Oxide)	5 A	1.7 Ohm	750 pF	Through Hole	5.5 V	-55 °C	150 °C	N-Channel	30 V	100 W	14.2 nC	10 V	TO-220-3	TO-220-3
IXYS IXTP5N50P	500 V	MOSFET (Metal Oxide)		1.4 Ohm	620 pF	Through Hole	5.5 V	-55 °C	150 °C	N-Channel	30 V		12.6 nC	10 V	TO-220-3	TO-220-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 500 V 4.8A (Tc) 89W (Tc) Through Hole TO-220-3

Technical documentation and resources

No documents available