BUJ103A,127

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WeEn Semiconductors

TO220AB/HV LIGHTING TRANSISTOR

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WeEn Semiconductors

TO220AB/HV LIGHTING TRANSISTOR

Technical Specifications

Parameters and characteristics commom to parts in this series

Specification	BUJ103A,127	BUJ103 Series

Current - Collector (Ic) (Max) [Max]	4 A	4 A
Current - Collector Cutoff (Max)	-	100 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	13	12 - 13 hFE
Mounting Type	Through Hole	Through Hole, Surface Mount
Operating Temperature	150 °C	150 °C
Package / Case	TO-220-3	TO-220-3 Full Pack, Isolated Tab, TO-220-3, SC-63, DPAK (2 Leads + Tab), TO-252-3
Power - Max [Max]	80 W	26 - 80 W
Supplier Device Package	TO-220AB	TO-220F, TO-220AB, DPAK
Transistor Type	NPN	NPN
Voltage - Collector Emitter Breakdown (Max)	400 V	400 V

TRANS NPN 400V 4A TO220F

Part	Package / Case	Transistor Type	Voltage - Collector Emitter Breakdown (Max)	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector Cutoff (Max) [Max]	Operating Temperature	Mounting Type	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]
WeEn Semiconductors BUJ103AX,127	TO-220-3 Full Pack, Isolated Tab	NPN	400 V	TO-220F	12 hFE	100 µA	150 °C	Through Hole	26 W	4 A
WeEn Semiconductors BUJ103A,127	TO-220-3	NPN	400 V	TO-220AB	13		150 °C	Through Hole	80 W	4 A
WeEn Semiconductors BUJ103AD,118	DPAK (2 Leads + Tab), SC-63, TO-252-3	NPN	400 V	DPAK	13	100 µA	150 °C	Surface Mount	80 W	4 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor NPN 400 V 4 A 80 W Through Hole TO-220AB

Technical documentation and resources

No documents available