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R75UI212050H3J - Product Image

R75UI212050H3J

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KEMET

POWER FILM CAPACITOR, METALLIZED PP, RADIAL BOX - 2 PIN, 0.012 ΜF, ± 5%, HIGH FREQUENCY

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R75UI212050H3J - Product Image

R75UI212050H3J

Active
KEMET

POWER FILM CAPACITOR, METALLIZED PP, RADIAL BOX - 2 PIN, 0.012 ΜF, ± 5%, HIGH FREQUENCY

Technical Specifications

Parameters and characteristics for this part

SpecificationR75UI212050H3J
ApplicationsAutomotive, High Frequency, Switching, High Pulse, DV/DT
Capacitance0.012 µF
Dielectric MaterialMetallized, Polypropylene (PP)
ESR (Equivalent Series Resistance)66.3 mOhms
Height - Seated (Max) [Max]0.575 in
Height - Seated (Max) [Max]14.6 mm
Lead Spacing15 mm
Lead Spacing0.591 in
Mounting TypeThrough Hole
Operating Temperature [Max]125 °C
Operating Temperature [Min]-55 °C
Package / CaseRadial
RatingsAEC-Q200
Size / Dimension [x]0.709 in
Size / Dimension [x]18 mm
Size / Dimension [y]8.5 mm
Size / Dimension [y]0.335 in
TerminationPC Pins
Tolerance5 %
Voltage Rating - AC700 V
Voltage Rating - DC2 kV
Voltage Rating - DC2 kVDC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 1$ 0.79
10$ 0.55
500$ 0.32
1000$ 0.27
5000$ 0.23
10000$ 0.22
LCSCPiece 1$ 0.20
200$ 0.08
500$ 0.08
1000$ 0.07
NewarkEach 1000$ 0.25
2500$ 0.23

Description

General part information

R75UI Series

R75H series are single metallized polypropylene film radial capacitors for DC and pulse applications. Capacitors are constructed of metallized polypropylene film with radial leads of tinned wire. The radial leads are electrically welded to the metal layer on the ends of the capacitor winding. The capacitor is encapsulated in a self-extinguishing solvent resistant plastic case with thermosetting resin material meeting UL 94 V–0 requirements. Two different winding constructions are used depending on voltage parameters and lead spacing. Typical applications include resonant circuit, high frequency medium to height current, silicon-controlled rectifier (SCR and IGBT) and SiC (MOSFET) commutation circuits as well as applications with high voltage and medium to high current in combination with high temperature and DC link.