IXFB70N100X

Active

LITTELFUSE

DISCMSFT NCH ULTRJNCTN XCLASS TO-264(3)/ TUBE

Find alt

Alpha

IXFB70N100X

Active

LITTELFUSE

DISCMSFT NCH ULTRJNCTN XCLASS TO-264(3)/ TUBE

Find alt

Alpha

Description Specifications Series Pricing CAD Documents

Description

General part information

X-Class Series

Ultra-Junction X-Class Power MOSFETs with fast body diodes are rugged devices that display the lowest on-state resistances in the industry, enabling very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, these devices exhibit low gate charges and superior dv/dt performance. In addition, thanks to the fast soft-recovery body diode, these Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings

Technical Specifications

Parameters and characteristics for this part

Specification	IXFB70N100X

Current - Continuous Drain (Id) (Tc)	70 A
Drain to Source Voltage (Vdss)	1000 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	350 nC
Input Capacitance (Ciss) (Max)	9160 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-264-3, TO-264AA
Package Name	PLUS264™
Power Dissipation (Max)	1785 W
Rds On (Max)	89 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max)	6 V

X-Class Series

DiscMSFT NCh UltrJnctn XClass TO-264(3)

Part	Power Dissipation (Max)	Vgs (Max)	Technology	Gate Charge (Max)	FET Type	Current - Continuous Drain (Id) (Tc)	Vgs(th) (Max)	Mounting Type	Operating Temperature (Min)	Operating Temperature (Max)	Input Capacitance (Ciss) (Max)	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Package Name	Package / Case	Rds On (Max)
LITTELFUSE IXFN74N100X	1170 W	30 V	MOSFET (Metal Oxide)	425 nC	N-Channel	74 A	5.5 V	Chassis Mount	-55 °C	150 °C	17000 pF	10 V	1000 V	SOT-227B	miniBLOC SOT-227-4	66 mOhm
LITTELFUSE IXFX52N100X	1250 W	30 V	MOSFET (Metal Oxide)	245 nC	N-Channel	52 A	6 V	Through Hole	-55 °C	150 °C	6725 pF	10 V	1000 V	PLUS247™-3	TO-247-3 Variant	125 mOhm
LITTELFUSE IXFP14N85XM	38 W	30 V	MOSFET (Metal Oxide)	30 nC	N-Channel	14 A	5.5 V	Through Hole	-55 °C	150 °C	1043 pF	10 V	850 V	TO-220	TO-220-3 Full Pack	550 mOhm
LITTELFUSE IXFP14N85XM	38 W	30 V	MOSFET (Metal Oxide)	30 nC	N-Channel	14 A	5.5 V	Through Hole	-55 °C	150 °C	1043 pF	10 V	850 V	TO-220	TO-220-3 Full Pack	550 mOhm
LITTELFUSE IXFX52N100X	1250 W	30 V	MOSFET (Metal Oxide)	245 nC	N-Channel	52 A	6 V	Through Hole	-55 °C	150 °C	6725 pF	10 V	1000 V	PLUS247™-3	TO-247-3 Variant	125 mOhm
LITTELFUSE IXFB70N100X	1785 W	30 V	MOSFET (Metal Oxide)	350 nC	N-Channel	70 A	6 V	Through Hole	-55 °C	150 °C	9160 pF	10 V	1000 V	PLUS264™	TO-264-3 TO-264AA	89 mOhm
LITTELFUSE IXFB70N100X	1785 W	30 V	MOSFET (Metal Oxide)	350 nC	N-Channel	70 A	6 V	Through Hole	-55 °C	150 °C	9160 pF	10 V	1000 V	PLUS264™	TO-264-3 TO-264AA	89 mOhm
LITTELFUSE IXFN52N100X	830 W	30 V	MOSFET (Metal Oxide)	245 nC	N-Channel	44 A	6 V	Chassis Mount	-55 °C	150 °C	6725 pF	10 V	1000 V	SOT-227B	miniBLOC SOT-227-4	125 mOhm
LITTELFUSE IXFN52N100X	830 W	30 V	MOSFET (Metal Oxide)	245 nC	N-Channel	44 A	6 V	Chassis Mount	-55 °C	150 °C	6725 pF	10 V	1000 V	SOT-227B	miniBLOC SOT-227-4	125 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Create a free account to access distributor pricing data.

CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

IXFB70N100X | Datasheet

Datasheet

Forward-Biased, Reverse-Biased, and Short-Circuit Safe Operating Area of MOSFETs and IGBTs

Datasheet