STB100NH02LT4

Obsolete

STMicroelectronics

MOSFET N-CH 24V 60A D2PAK

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Obsolete

STMicroelectronics

MOSFET N-CH 24V 60A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	STB100NH02LT4

Current - Continuous Drain (Id) @ 25°C	60 A
Drain to Source Voltage (Vdss)	24 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	10 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	64 nC
Input Capacitance (Ciss) (Max) @ Vds	2850 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	100 W
Rds On (Max) @ Id, Vgs	6 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	1.8 V

Part	Technology	Vgs(th) (Max) @ Id	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]	Package / Case	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]
STMicroelectronics STB100NH02LT4	MOSFET (Metal Oxide)	1.8 V	Surface Mount	-55 °C	175 ░C	20 V	24 V	60 A	N-Channel	2850 pF	10 V	5 V	6 mOhm	100 W	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	D2PAK	64 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 24 V 60A (Tc) 100W (Tc) Surface Mount D2PAK

Technical documentation and resources