BFR 183W E6327

Obsolete

Infineon Technologies

RF TRANS NPN 12V 8GHZ SOT323-3

Search across all available documentation for this part.

Obsolete

Infineon Technologies

RF TRANS NPN 12V 8GHZ SOT323-3

Technical Specifications

Parameters and characteristics for this part

Specification	BFR 183W E6327

Current - Collector (Ic) (Max) [Max]	65 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	70
Frequency - Transition	8 GHz
Gain	18.5 dBi
Mounting Type	Surface Mount
Noise Figure (dB Typ @ f) [Max]	1.4 dB
Noise Figure (dB Typ @ f) [Min]	0.9 dB
Operating Temperature	150 °C
Package / Case	SC-70, SOT-323
Power - Max [Max]	450 mW
Supplier Device Package	PG-SOT323
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	12 V

Part	Supplier Device Package	Power - Max [Max]	Transistor Type	Mounting Type	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector (Ic) (Max) [Max]	Operating Temperature	Frequency - Transition	Voltage - Collector Emitter Breakdown (Max)	Noise Figure (dB Typ @ f) [Min]	Noise Figure (dB Typ @ f) [Max]	Gain
Infineon Technologies BFR 183W E6327	PG-SOT323	450 mW	NPN	Surface Mount	SC-70 SOT-323	70	65 mA	150 °C	8 GHz	12 V	0.9 dB	1.4 dB	18.5 dBi
Infineon Technologies BFR 183T E6327	PG-SC75-3D	250 mW	NPN	Surface Mount	SC-75 SOT-416	50	65 mA	150 °C	8 GHz	12 V	1.2 dB	2 dB	19.5 dB

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

RF Transistor NPN 12V 65mA 8GHz 450mW Surface Mount PG-SOT323

Technical documentation and resources