IRLR3705ZTRPBF

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Infineon Technologies

POWER MOSFET, N CHANNEL, 55 V, 42 A, 0.0065 OHM, TO-252AA, SURFACE MOUNT

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Infineon Technologies

POWER MOSFET, N CHANNEL, 55 V, 42 A, 0.0065 OHM, TO-252AA, SURFACE MOUNT

Technical Specifications

Parameters and characteristics for this part

Specification	IRLR3705ZTRPBF

Current - Continuous Drain (Id) @ 25°C	42 A
Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	66 nC
Input Capacitance (Ciss) (Max) @ Vds	2900 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	130 W
Rds On (Max) @ Id, Vgs	8 mOhm
Supplier Device Package	TO-252AA (DPAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	16 V
Vgs(th) (Max) @ Id	3 V

Part	Supplier Device Package	FET Type	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Package / Case	Technology	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs
Infineon Technologies IRLR3705ZTRPBF	TO-252AA (DPAK)	N-Channel	42 A	8 mOhm	DPAK (2 Leads + Tab) SC-63 TO-252-3	MOSFET (Metal Oxide)	2900 pF	16 V	-55 °C	175 ░C	3 V	55 V	130 W	4.5 V 10 V	Surface Mount	66 nC

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General part information

N-Channel 55 V 42A (Tc) 130W (Tc) Surface Mount TO-252AA (DPAK)

Technical documentation and resources