IPLK60R600PFD7ATMA1

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Infineon Technologies

COOLMOS™ PFD7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; THINPAK 5X6 PACKAGE; 600 MOHM; PRICE/PERFORMANCE

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IPLK60R600PFD7ATMA1

Active

Infineon Technologies

COOLMOS™ PFD7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; THINPAK 5X6 PACKAGE; 600 MOHM; PRICE/PERFORMANCE

Deep-Dive with AI

DocumentsDatasheet Technical Data Sheet EN

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPLK60R600PFD7ATMA1

Current - Continuous Drain (Id) @ 25°C	7 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	8.5 nC
Input Capacitance (Ciss) (Max) @ Vds	344 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	45 W
Rds On (Max) @ Id, Vgs	600 mOhm
Supplier Device Package	PG-TDSON-8-52
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

IPLK60 Series

Part	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	FET Type	Drain to Source Voltage (Vdss)	Technology	Supplier Device Package	Mounting Type	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]
Infineon Technologies IPLK60R600PFD7ATMA1	8-PowerTDFN	10 V	45 W	-55 °C	150 °C	4.5 V	N-Channel	600 V	MOSFET (Metal Oxide)	PG-TDSON-8-52	Surface Mount	600 mOhm	7 A	344 pF	20 V	8.5 nC
Infineon Technologies IPLK60R1K5PFD7ATMA1	8-PowerTDFN	10 V	25 W	-55 °C	150 °C	4.5 V	N-Channel	600 V	MOSFET (Metal Oxide)	PG-TDSON-8-52	Surface Mount	1.5 Ohm	3.8 A	169 pF	20 V		4.6 nC
Infineon Technologies IPLK60R1K0PFD7ATMA1	8-PowerTDFN	10 V		-55 °C	150 °C	4.5 V	N-Channel	600 V	MOSFET (Metal Oxide)	PG-TDSON-8-52	Surface Mount	1 Ohm	5.2 A		20 V		6 nC	31.3 W	230 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 1.81
		10	$ 1.15
		100	$ 0.77
		500	$ 0.61
		1000	$ 0.56
		2000	$ 0.52
	Digi-Reel®	1	$ 1.81
		10	$ 1.15
		100	$ 0.77
		500	$ 0.61
		1000	$ 0.56
		2000	$ 0.52
	Tape & Reel (TR)	5000	$ 0.47
Newark	Each (Supplied on Cut Tape)	1	$ 1.93
		10	$ 1.34
		25	$ 1.22
		50	$ 1.11
		100	$ 0.99
		250	$ 0.92
		500	$ 0.84
		1000	$ 0.75

Description

General part information

IPLK60 Series

The 600 V CoolMOS™ PFD7 superjunction MOSFET (IPLK60R600PFD7) complements theCoolMOS™7 offering for consumer applications. The IPLK60R600PFD7 in a Thin-PAK 5x6 package features RDS(on)of 600 mOhm leading to low switching losses. This package is characterized by a very small footprint of 5x6 mm² and a very low profile with a height of 1 mm. Together with its benchmark low parasitics, these features lead to significantly smaller form factors and help to boost power density. The CoolMOS™ PFD7 products come with a fast body diode ensuring a robust device and in turn reduced bill-of-material (BOM) for the customer. This product family is tailored to ultrahigh power density as well as highest efficiency designs. The products primarily address ultrahigh density chargers, adapters and low-power motor drives. The 600 V CoolMOS™ PFD7 offers improved light- and full-load efficiency overCoolMOS™P7 and CE MOSFET technologies resulting in an increase in power density by 1.8 W/inch3.