DXTN5860DFDB-7

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Diodes Inc

LOW SATURATION TRANSISTOR NPN 60V 6A 3-PIN U-DFN T/R

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Diodes Inc

LOW SATURATION TRANSISTOR NPN 60V 6A 3-PIN U-DFN T/R

Technical Specifications

Parameters and characteristics for this part

Specification	DXTN5860DFDB-7

Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	280
Frequency - Transition	115 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	3-UDFN Exposed Pad
Power - Max [Max]	690 mW
Supplier Device Package	U-DFN2020-3 (Type B)
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	315 mV
Voltage - Collector Emitter Breakdown (Max)	60 V

NPN, 60V, 6A, DFN2020-3

Part	Operating Temperature [Min]	Operating Temperature [Max]	Vce Saturation (Max) @ Ib, Ic	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Frequency - Transition	Supplier Device Package	Current - Collector Cutoff (Max) [Max]	Power - Max [Max]	Package / Case	Voltage - Collector Emitter Breakdown (Max)	Mounting Type
Diodes Inc DXTN5860DFDB-7	-55 °C	150 °C	315 mV	NPN	280	115 MHz	U-DFN2020-3 (Type B)	100 nA	690 mW	3-UDFN Exposed Pad	60 V	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

60V NPN LOW SATURATION TRANSISTOR IN U-DFN2020-3

Technical documentation and resources