IXTY5N50P

Obsolete

IXYS

MOSFET N-CH 500V 4.8A TO252

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Obsolete

IXYS

MOSFET N-CH 500V 4.8A TO252

Technical Specifications

Parameters and characteristics for this part

Specification	IXTY5N50P

Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	12.6 nC
Input Capacitance (Ciss) (Max) @ Vds	620 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Rds On (Max) @ Id, Vgs	1.4 Ohm
Supplier Device Package	TO-252AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5.5 V

Part	Supplier Device Package	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	FET Type	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Package / Case	Vgs(th) (Max) @ Id	Technology	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C
IXYS IXTY5N50P	TO-252AA	500 V	-55 °C	150 °C	10 V	12.6 nC	1.4 Ohm	N-Channel	30 V	620 pF	Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3	5.5 V	MOSFET (Metal Oxide)
IXYS IXTY50N085T	TO-252AA	85 V	-55 °C	175 ░C	10 V		23 mOhm	N-Channel	20 V	1460 pF	Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3	4 V	MOSFET (Metal Oxide)	130 W	34 nC	50 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 500 V 4.8A (Tc) 89W (Tc) Surface Mount TO-252AA

Technical documentation and resources