IXYA30N120A4HV
ActiveDISC IGBT XPT-GENX4 TO-263D2/ TUBE
IXYA30N120A4HV
ActiveDISC IGBT XPT-GENX4 TO-263D2/ TUBE
Description
General part information
IXYA30N120A4HV Series
Utilizing XPT™ thin-wafer technology and 4th generation (GenX4™) Trench IGBT process, these up to 1200V devices helps to reduced gate driver requirements and conduction losses. It features reduced thermal resistance, low losses, high current densities and low gate charge requirement. A positive collector-to-emitter voltage temperature coefficient enables designers to use multiple devices in parallel. Advantages: Ideal for high power density and high inrush currents, low loss applications Hard-switching capable Easy paralleling of devices Reduced gate driver requirements Ease of replacement and availability of isolation package
Technical Specifications
Parameters and characteristics for this part
| Specification | IXYA30N120A4HV |
|---|---|
| Current - Collector (Ic) (Max) | 106 A |
| Current - Collector Pulsed (Icm) | 184 A |
| Gate Charge | 57 nC |
| IGBT Type | PT |
| Input Type | Standard |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Package Name | TO-263HV |
| Power - Max | 500 VA |
| Reverse Recovery Time (trr) | 42 ns |
| Switching Energy (Off) | 3.4 mJ |
| Switching Energy (On) | 4 mJ |
| Td (off) @ 25°C | 235 ns |
| Td (on) @ 25°C | 15 ns |
| Test Condition Current | 25 A |
| Test Condition Resistance | 5 Ohm |
| Test Condition Voltage | 960 V |
| Test Condition Voltage (Secondary) | 15 V |
| Vce(on) (Max) | 1.9 V |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
Pricing
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CAD
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Documents
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