BC846SH6327XTSA1

Infineon Technologies

TRANS, NPN, DUAL, 65V, SOT-363

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Infineon Technologies

TRANS, NPN, DUAL, 65V, SOT-363

Technical Specifications

Parameters and characteristics for this part

Specification	BC846SH6327XTSA1

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	15 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	200
Frequency - Transition	250 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	6-VSSOP, SC-88, SOT-363
Power - Max [Max]	250 mW
Supplier Device Package	PG-SOT363-PO
Transistor Type	2 NPN (Dual)
Vce Saturation (Max) @ Ib, Ic	600 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	65 V

Part	Operating Temperature	Vce Saturation (Max) @ Ib, Ic	Power - Max [Max]	Transistor Type	Frequency - Transition	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Voltage - Collector Emitter Breakdown (Max) [Max]	Supplier Device Package	Package / Case	Current - Collector Cutoff (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Mounting Type
Infineon Technologies BC846SE6327BTSA1	150 °C	600 mV	250 mW	2 NPN (Dual)	250 MHz	200	65 V	PG-SOT363-PO	6-VSSOP SC-88 SOT-363	15 nA	100 mA	Surface Mount
Infineon Technologies BC846SH6327XTSA1	150 °C	600 mV	250 mW	2 NPN (Dual)	250 MHz	200	65 V	PG-SOT363-PO	6-VSSOP SC-88 SOT-363	15 nA	100 mA	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor Array 2 NPN (Dual) 65V 100mA 250MHz 250mW Surface Mount PG-SOT363-PO

Technical documentation and resources

No documents available