BCR35PNH6433XTMA1

Infineon Technologies

TRANS NPN/PNP PREBIAS SOT363

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Infineon Technologies

TRANS NPN/PNP PREBIAS SOT363

Technical Specifications

Parameters and characteristics for this part

Specification	BCR35PNH6433XTMA1

Current - Collector (Ic) (Max) [Max]	100 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	70
Frequency - Transition	150 MHz
Mounting Type	Surface Mount
Package / Case	6-VSSOP, SC-88, SOT-363
Power - Max [Max]	250 mW
Resistor - Emitter Base (R2)	47000 Ohms
Supplier Device Package	PG-SOT363-PO
Transistor Type	1 NPN, 1 PNP
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Vce Saturation (Max) @ Ib, Ic	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Package / Case	Power - Max [Max]	Frequency - Transition	Transistor Type	Resistor - Emitter Base (R2)
Infineon Technologies BCR35PNH6433XTMA1	300 mV	PG-SOT363-PO	70	Surface Mount	50 V	100 mA	6-VSSOP SC-88 SOT-363	250 mW	150 MHz	1 NPN 1 PNP	47000 Ohms
Infineon Technologies BCR35PNH6327XTSA1	300 mV	PG-SOT363-PO	70	Surface Mount	50 V	100 mA	6-VSSOP SC-88 SOT-363	250 mW	150 MHz	1 NPN 1 PNP	47000 Ohms

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 150MHz 250mW Surface Mount PG-SOT363-PO

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