DXT5551P5-13

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Diodes Inc

SMALL SIGNAL BIPOLAR TRANSISTOR, 0.6A I(C), 160V V(BR)CEO, 1-ELEMENT, NPN, SILICON, TO-252, GREEN, PLASTIC, POWERDI5, 3 PIN

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Active

Diodes Inc

SMALL SIGNAL BIPOLAR TRANSISTOR, 0.6A I(C), 160V V(BR)CEO, 1-ELEMENT, NPN, SILICON, TO-252, GREEN, PLASTIC, POWERDI5, 3 PIN

Technical Specifications

Parameters and characteristics for this part

Specification	DXT5551P5-13

Current - Collector (Ic) (Max) [Max]	600 mA
Current - Collector Cutoff (Max) [Max]	50 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	80
Frequency - Transition	130 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerDI™ 5
Power - Max [Max]	2.25 W
Supplier Device Package	PowerDI™ 5
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	200 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	160 V

NPN, 160V, 0.6A, PowerDI5

Part	Vce Saturation (Max) @ Ib, Ic	Package / Case	Power - Max [Max]	Current - Collector Cutoff (Max) [Max]	Transistor Type	Mounting Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector (Ic) (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Frequency - Transition	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]
Diodes Inc DXT5551-13	200 mV	TO-243AA	1 W	50 nA	NPN	Surface Mount	80	600 mA	-55 °C	150 °C	300 MHz	SOT-89-3	160 V
Diodes Inc DXT5551P5-13	200 mV	PowerDI™ 5	2.25 W	50 nA	NPN	Surface Mount	80	600 mA	-55 °C	150 °C	130 MHz	PowerDI™ 5	160 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

NPN, 160V, 0.6A, PowerDI5

Technical documentation and resources