IXFB50N80Q2

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IXYS

MOSFET N-CH 800V 50A PLUS264

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IXYS

MOSFET N-CH 800V 50A PLUS264

Technical Specifications

Parameters and characteristics for this part

Specification	IXFB50N80Q2

Current - Continuous Drain (Id) @ 25°C	50 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	260 nC
Input Capacitance (Ciss) (Max) @ Vds	7200 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-264AA, TO-264-3
Power Dissipation (Max)	1135 W
Rds On (Max) @ Id, Vgs	160 mOhm
Supplier Device Package	PLUS264™
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5.5 V

Part	Package / Case	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Technology	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Mounting Type
IXYS IXFB50N80Q2	TO-264-3 TO-264AA	1135 W	50 A	PLUS264™	MOSFET (Metal Oxide)	800 V	-55 °C	150 °C	30 V	7200 pF	160 mOhm	5.5 V	N-Channel	10 V	260 nC	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 800 V 50A (Tc) 1135W (Tc) Through Hole PLUS264™

Technical documentation and resources

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