PSMN040-200W,127

Obsolete

NXP USA Inc.

MOSFET N-CH 200V 50A TO247-3

PSMN040-200W,127

Obsolete

NXP USA Inc.

MOSFET N-CH 200V 50A TO247-3

Description Specifications Series Pricing CAD Documents

Description

General part information

PSMN0 Series

N-Channel 200 V 50A (Tc) 300W (Tc) Through Hole TO-247

Technical Specifications

Parameters and characteristics for this part

Specification	PSMN040-200W,127

Current - Continuous Drain (Id) (Tc)	50 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	183 nC
Input Capacitance (Ciss) (Max)	9530 pF
Mounting Type	Through Hole
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-247-3
Package Name	TO-247
Power Dissipation (Max)	300 W
Rds On (Max)	40 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

PSMN0 Series

Part	Package / Case	Power Dissipation (Max)	Technology	Vgs(th) (Max)	Rds On (Max)	Mounting Type	Gate Charge (Max)	Package Name	Package Width	Package Length	Input Capacitance (Ciss) (Max)	Drain to Source Voltage (Vdss)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	FET Type	Vgs (Max)	Current - Continuous Drain (Id) (Tc)	Operating Temperature (Min)	Operating Temperature (Max)	Drive Voltage (Max Rds On, Min Rds On)
NXP USA Inc. PSMN013-30LL,115	8-VDFN Exposed Pad	41 W	MOSFET (Metal Oxide)	2.15 V	13 mOhm	Surface Mount	-2 } 12.2 nC 12.2 nC 12.2 nC 12.2 nC	8-DFN3333	3.3 mm	3.3 mm	768 pF	30 V	10 V	4.5 V	N-Channel	20 V	21 A	-55 °C	150 °C
NXP USA Inc. PSMN004-55W,127	TO-247-3	300 W	MOSFET (Metal Oxide)	2 V	4.2 mOhm	Through Hole	226 nC	TO-247			13000 pF	55 V	10 V	4.5 V	N-Channel	15 V	100 A	-55 °C	175 °C
NXP USA Inc. PSMN008-75P,127	TO-220-3	230 W	MOSFET (Metal Oxide)	4 V	8.5 mOhm	Through Hole	122.8 nC	TO-220AB			5260 pF	75 V			N-Channel	20 V	75 A	-55 °C	175 °C	10 V
NXP USA Inc. PSMN010-55D,118	DPAK (2 Leads + Tab) SC-63 TO-252-3	125 W	MOSFET (Metal Oxide)	2 V	10.5 mOhm	Surface Mount	55 nC	DPak			3300 pF	55 V	10 V	4.5 V	N-Channel	15 V	75 A	-55 °C	175 °C
NXP USA Inc. PSMN004-36B,118	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	230 W	MOSFET (Metal Oxide)	2 V	4 mOhm	Surface Mount	97 nC	D2PAK			6000 pF	36 V	10 V	4.5 V	N-Channel	15 V	75 A	-55 °C	175 °C
NXP USA Inc. PSMN023-80LS,115	8-VDFN Exposed Pad	65 W	MOSFET (Metal Oxide)	4 V	23 mOhm	Surface Mount	21 nC	8-DFN3333	3.3 mm	3.3 mm	1295 pF	80 V			N-Channel	20 V	34 A	-55 °C	150 °C	10 V
NXP USA Inc. PSMN009-100W,127	TO-247-3	300 W	MOSFET (Metal Oxide)	4 V	9 mOhm	Through Hole	214 nC	TO-247			9000 pF	100 V			N-Channel	20 V	100 A	-55 °C	175 °C	10 V
NXP USA Inc. PSMN040-200W,127	TO-247-3	300 W	MOSFET (Metal Oxide)	4 V	40 mOhm	Through Hole	183 nC	TO-247			9530 pF	200 V			N-Channel	20 V	50 A	-55 °C	175 °C	10 V
NXP USA Inc. PSMN035-100LS,115	8-VDFN Exposed Pad	65 W	MOSFET (Metal Oxide)	4 V	32 mOhm	Surface Mount	23 nC	8-DFN3333	3.3 mm	3.3 mm	1350 pF 1350 pF	100 V			N-Channel	20 V	27 A	-55 °C	150 °C	10 V
NXP USA Inc. PSMN013-100XS,127	Isolated Tab TO-220-3 Full Pack	48.4 W	MOSFET (Metal Oxide)	4 V	13.9 mOhm	Through Hole	57.5 nC	TO-220F			3195 pF 3195 pF	100 V			N-Channel	20 V	35.2 A	-55 °C	175 °C	10 V

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

PSMN040-200W,127 | Datasheet