SPW11N80C3FKSA1
Infineon Technologies
COOLMOS™ C3 N-CHANNEL SUPERJUNCTION MOSFET 800 V ; TO-247 PACKAGE; 450 MOHM; PRICE/PERFORMANCE
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SPW11N80C3FKSA1
Infineon Technologies
COOLMOS™ C3 N-CHANNEL SUPERJUNCTION MOSFET 800 V ; TO-247 PACKAGE; 450 MOHM; PRICE/PERFORMANCE
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Technical Specifications
Parameters and characteristics for this part
| Specification | SPW11N80C3FKSA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 11 A |
| Drain to Source Voltage (Vdss) | 800 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 85 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1600 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-3 |
| Power Dissipation (Max) | 156 W |
| Rds On (Max) @ Id, Vgs | 450 mOhm |
| Supplier Device Package | PG-TO247-3-1 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3.9 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
SPW11N80 Series
Replacement forCoolMOS™ C3isCoolMOS™ P7 800V CoolMOS™ C3 is Infineon's third series of CoolMOS™ with market entry in 2001. C3 is the "working horse" of the portfolio.
Documents
Technical documentation and resources