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PD55025-E - PowerSO-10RF (Formed Lead)

PD55025-E

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STMicroelectronics

RF POWER TRANSISTOR, LDMOST PLASTIC FAMILY N-CHANNEL ENHANCEMENT-MODE, LATERAL MOSFETS

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Search across all available documentation for this part.

PD55025-E - PowerSO-10RF (Formed Lead)

PD55025-E

Active
STMicroelectronics

RF POWER TRANSISTOR, LDMOST PLASTIC FAMILY N-CHANNEL ENHANCEMENT-MODE, LATERAL MOSFETS

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationPD55025-E
Current - Test200 mA
Current Rating (Amps)7 A
Frequency500 MHz
Gain14.5 dBi
Package / CasePowerSO-10 Exposed Bottom Pad
Power - Output25 W
Supplier Device Package10-PowerSO
Voltage - Rated40 V
Voltage - Test12.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 29.95
10$ 27.63
50$ 26.39
100$ 23.59
250$ 22.50

Description

General part information

PD55025-E Series

The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. The device’s superior linearity performance makes it an ideal solution for car mobile radio. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performance and ease of assembly. Mounting recommendations are available in www.st.com/rf/ (look for application note AN1294).

Documents

Technical documentation and resources