IXTK160N20

Obsolete

IXYS

MOSFET N-CH 200V 160A TO264

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Obsolete

IXYS

MOSFET N-CH 200V 160A TO264

Technical Specifications

Parameters and characteristics for this part

Specification	IXTK160N20

Current - Continuous Drain (Id) @ 25°C	160 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	415 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	12900 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-264AA, TO-264-3
Power Dissipation (Max)	730 W
Rds On (Max) @ Id, Vgs	13 mOhm
Supplier Device Package	TO-264 (IXTK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	FET Type	Technology	Vgs (Max)	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)
IXYS IXTK160N20	N-Channel	MOSFET (Metal Oxide)	20 V	13 mOhm	12900 pF	TO-264 (IXTK)	-55 °C	150 °C	Through Hole	730 W	10 V	4 V	160 A	TO-264-3 TO-264AA	415 nC	200 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 200 V 160A (Tc) 730W (Tc) Through Hole TO-264 (IXTK)

Technical documentation and resources

No documents available