IPP055N03LGXKSA1
LTBPOWER MOSFET, N CHANNEL, 30 V, 50 A, 0.0046 OHM, TO-220, THROUGH HOLE
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IPP055N03LGXKSA1
LTBPOWER MOSFET, N CHANNEL, 30 V, 50 A, 0.0046 OHM, TO-220, THROUGH HOLE
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Technical Specifications
Parameters and characteristics for this part
| Specification | IPP055N03LGXKSA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 50 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 3200 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) | 68 W |
| Rds On (Max) @ Id, Vgs | 5.5 mOhm |
| Supplier Device Package | PG-TO220-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id [Max] | 2.2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IPP055 Series
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. OptiMOS™ 30V products are tailored to the needs of power management in notebook by improved EMI behavior, as well as increased battery life. Available in halfbridge configuration (power stage 5x6)
Documents
Technical documentation and resources