IXKP20N60C5

Obsolete

IXYS

MOSFET N-CH 600V 20A TO220AB

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Obsolete

IXYS

MOSFET N-CH 600V 20A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	IXKP20N60C5

Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	45 nC
Input Capacitance (Ciss) (Max) @ Vds	1520 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Rds On (Max) @ Id, Vgs	200 mOhm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Package / Case	Technology	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]
IXYS IXKP20N60C5M	600 V	3.5 V	Through Hole	10 V	7.6 A	1520 pF	20 V	200 mOhm	30 nC	TO-220ABFP	TO-220-3 Full Pack	MOSFET (Metal Oxide)	N-Channel	-55 °C	150 °C
IXYS IXKP20N60C5	600 V	3.5 V	Through Hole	10 V	20 A	1520 pF	20 V	200 mOhm		TO-220-3	TO-220-3	MOSFET (Metal Oxide)	N-Channel	-55 °C	150 °C	45 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 600 V 20A (Tc) Through Hole TO-220-3

Technical documentation and resources

No documents available