PSMN102-200Y,115

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Nexperia USA Inc.

N-CHANNEL TRENCHMOS SILICONMAX STANDARD LEVEL FET

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PSMN102-200Y,115

Active

Nexperia USA Inc.

N-CHANNEL TRENCHMOS SILICONMAX STANDARD LEVEL FET

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Description Specifications Series Pricing CAD Documents

Description

General part information

PSMN102 Series

SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

Technical Specifications

Parameters and characteristics for this part

Specification	PSMN102-200Y,115

Current - Continuous Drain (Id) (Tc)	21.5 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	30.7 nC
Input Capacitance (Ciss) (Max)	1568 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	SOT-669, SC-100
Package Name	LFPAK56, Power-SO8
Power Dissipation (Max)	113 W
Rds On (Max)	102 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

PSMN102 Series

N-channel TrenchMOS SiliconMAX standard level FET

Part	Package Name	Gate Charge (Max)	FET Type	Package / Case	Vgs (Max)	Current - Continuous Drain (Id) (Tc)	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Rds On (Max)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max)	Mounting Type	Operating Temperature (Min)	Operating Temperature (Max)	Vgs(th) (Max)	Technology
Nexperia USA Inc. PSMN102-200Y,115	LFPAK56 Power-SO8	30.7 nC	N-Channel	SC-100 SOT-669	20 V	21.5 A	10 V	113 W	102 mOhm	200 V	1568 pF	Surface Mount	-55 °C	150 °C	4 V	MOSFET (Metal Oxide)