
STF17N62K3
ObsoleteSTMicroelectronics
MOSFET N-CH 620V 15.5A TO220FP
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STF17N62K3
ObsoleteSTMicroelectronics
MOSFET N-CH 620V 15.5A TO220FP
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | STF17N62K3 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 15.5 A |
| Drain to Source Voltage (Vdss) | 620 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 105 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 3100 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-220-3 Full Pack |
| Power Dissipation (Max) | 40 W |
| Rds On (Max) @ Id, Vgs [Max] | 340 mOhm |
| Supplier Device Package | TO-220FP |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 5.22 | |
| 50 | $ 4.14 | |||
| 100 | $ 3.55 | |||
| 500 | $ 3.15 | |||
Description
General part information
STF17N80K5 Series
This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
Documents
Technical documentation and resources