STD13003T4

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STMicroelectronics

TRANS GP BJT NPN 400V 1.5A 20000MW 3-PIN(2+TAB) DPAK T/R

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Active

STMicroelectronics

TRANS GP BJT NPN 400V 1.5A 20000MW 3-PIN(2+TAB) DPAK T/R

Technical Specifications

Parameters and characteristics for this part

Specification	STD13003T4

Current - Collector (Ic) (Max) [Max]	1.5 A
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	5
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power - Max [Max]	20 W
Supplier Device Package	DPAK
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	3 V
Voltage - Collector Emitter Breakdown (Max)	400 V

High voltage fast-switching NPN power transistor

Part	Mounting Type	Package / Case	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Operating Temperature	Supplier Device Package	Vce Saturation (Max) @ Ib, Ic	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Transistor Type
STMicroelectronics STD13003T4	Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3	400 V	1.5 A	20 W	150 °C	DPAK	3 V	5	NPN

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability.

It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.

The device is designed for use in lighting applications and low cost switch-mode power supplies.

Technical documentation and resources