IPB50R299CPATMA1

Obsolete

Infineon Technologies

MOSFET N-CH 550V 12A TO263-3

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Obsolete

Infineon Technologies

MOSFET N-CH 550V 12A TO263-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPB50R299CPATMA1

Current - Continuous Drain (Id) @ 25°C	12 A
Drain to Source Voltage (Vdss)	550 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	31 nC
Input Capacitance (Ciss) (Max) @ Vds	1190 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	104 W
Rds On (Max) @ Id, Vgs	299 mOhm
Supplier Device Package	PG-TO263-3-2
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Technology	Power Dissipation (Max)	Supplier Device Package	Mounting Type	FET Type	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]
Infineon Technologies IPB50R299CPATMA1	MOSFET (Metal Oxide)	104 W	PG-TO263-3-2	Surface Mount	N-Channel	31 nC	550 V	20 V	-55 °C	150 °C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	10 V	299 mOhm	1190 pF	3.5 V	12 A
Infineon Technologies IPB50R250CPATMA1	MOSFET (Metal Oxide)		PG-TO263-3-2	Surface Mount	N-Channel	36 nC	550 V	20 V	-55 °C	150 °C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	10 V	250 mOhm		3.5 V	13 A	114 W	1420 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 550 V 12A (Tc) 104W (Tc) Surface Mount PG-TO263-3-2

Technical documentation and resources